PART |
Description |
Maker |
BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN Silicon RF Transistor
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INFINEON[Infineon Technologies AG]
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IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管 From old datasheet system SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A |
TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs TRANS PNP BIPOLAR 45V SOT323 TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB TRANSISTOR PNP BIPOLAR 45V SOT23
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics STMicroelectronics
|
AD70402 AD704AN AD704 AD704JR-_REEL AD704TQ_883B A |
-18V; quad picoampere inout current bipolar Op Amp. For industrial/process controls, weigh scales Quad Picoampere Input Current Bipolar Op Amp OP-AMP|QUAD|BIPOLAR|SOP|16PIN|PLASTIC
|
Analog Devices
|
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K |
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|